Title: Gallium Phosphide
CAS Registry Number: 12063-98-8
Molecular Formula: GaP
Molecular Weight: 100.70
Percent Composition: Ga 69.24%, P 30.76%
Literature References: Prepn and description: Folberth, Oswald,
Z. Naturforsch. 9a, 1050 (1954); Wolff
et al., Phys. Rev. 94, 753 (1954); Antell, Effer,
J. Electrochem. Soc. 106, 509 (1959);
107, 252 (1960); Frosch, Derick,
ibid. 108, 251 (1961); Addamiano,
J. Am. Chem. Soc. 82, 1537 (1960); Gershenzon, Mikulyak,
ibid. 108, 548 (1961); Pizzarello,
ibid. 109, 226 (1962). Seguin, Gans,
US 2862787 (1958); Chang,
US 2921905 (1960 to Westinghouse).
Properties: Translucent, amber-colored crystals of the zinc blende type. Greenish-yellow, opaque cryst mass, when unreacted gallium is present. mp 1465°. Dielectric constant 8.4. Energy gap 2.25 ev. Hole mobility 70. Electron mobility 1200. Current density at 4 volts = 25 amps/cm2 at 25° (in rectifier circuitry).
Melting point: mp 1465°
Use: In semiconductor electronics.
