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CAS No 12063-98-8 , gallanylidynephosphane Search by region : China

  • Name: gallanylidynephosphane
  • Synonyms: gallanylidynephosphane; Gallium phosphide (GaP);gallanylidynephosphane; CCRIS 4019; AC1L34BT; 12063-98-8; EINECS 235-057-2;Gallium monophosphide; 521574_ALDRICH;
  • CAS Registry Number:
  • Transport: 3288
  • Melting Point: 1480 °C
  • Flash Point: °C
  • Boiling Point: °Cat760mmHg
  • Density: g/cm3
  • Safety Statements:
    Hazard Codes Xi
    Risk Statements 36/37
    Safety Statements 26
    RIDADR 3288
    WGK Germany 2
    RTECS LW9675000
    10-21
  • Hazard Symbols: Xi: Irritant;
  • Flash Point: °C
  • EINECS: 235-057-2
  • Molecular Weight: 100.696762
  • InchiKey: HZXMRANICFIONG-UHFFFAOYSA-N
  • InChI: InChI=1S/Ga.P
  • Risk Statements: 36/37
  • Molecular Formula: GaP
  • Molecular Structure:CAS No:12063-98-8 gallanylidynephosphane

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12063-98-8 Gallium Phosphide

  • China Beijing Cerametek Materials Co. Ltd. [Manufacturer]
  • Tel: +86-10-6156.6641
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  • Address: Beijing Cerametek Materials Co. Ltd.
    2-E051, BPE, W. NongLin Rd.,
    FangShan, Beijing, 102400,
    China null,nullChina
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References of gallanylidynephosphane
Title: Gallium Phosphide
CAS Registry Number: 12063-98-8
Molecular Formula: GaP
Molecular Weight: 100.70
Percent Composition: Ga 69.24%, P 30.76%
Literature References: Prepn and description: Folberth, Oswald, Z. Naturforsch. 9a, 1050 (1954); Wolff et al., Phys. Rev. 94, 753 (1954); Antell, Effer, J. Electrochem. Soc. 106, 509 (1959); 107, 252 (1960); Frosch, Derick, ibid. 108, 251 (1961); Addamiano, J. Am. Chem. Soc. 82, 1537 (1960); Gershenzon, Mikulyak, ibid. 108, 548 (1961); Pizzarello, ibid. 109, 226 (1962). Seguin, Gans, US 2862787 (1958); Chang, US 2921905 (1960 to Westinghouse).
Properties: Translucent, amber-colored crystals of the zinc blende type. Greenish-yellow, opaque cryst mass, when unreacted gallium is present. mp 1465°. Dielectric constant 8.4. Energy gap 2.25 ev. Hole mobility 70. Electron mobility 1200. Current density at 4 volts = 25 amps/cm2 at 25° (in rectifier circuitry).
Melting point: mp 1465°
Use: In semiconductor electronics.