Title: Aluminum Nitride
CAS Registry Number: 24304-00-5
Molecular Formula: AlN
Molecular Weight: 40.99
Percent Composition: Al 65.82%, N 34.17%
Literature References: Semiconductor material. Prepn: F. Briegleb, A. Geuther,
Ann. 123, 228 (1862). Lattice structure: H. Ott,
Z. Physik. 22, 201 (1924). Crystal structure: G. A. Jeffrey, G. S. Parry,
J. Chem. Phys. 23, 406 (1953). Prepn of AlN films by laser-induced chemical vapor deposition: X. Li, T. L. Tansley,
J. Appl. Phys. 68, 5369 (1990). Review of growth of high purity crystals: G. A. Slack, T. F. McNelly,
J. Cryst. Growth 34, 263-279 (1976); of prepn and properties: D. D. Marchant, T. E. Nemecek,
Adv. Ceram. 26, 19-54 (1989); of properties and applications: B. H. Mussler,
Am. Ceram. Soc. Bull. 79, 45-47 (2000).
Properties: Colorless, translucent material; crystallizes with a hexagonal wurtzite structure. Bandgap at room temp: 6.2 eV. d 3.26. Hardness no. 8 on Mohs' scale. mp 2400° (dec). Thermal conductivity at 300 K: 3.19 W/cm K. Specific heat: 738 ±20 J/kgK.
Melting point: mp 2400° (dec)
Density: d 3.26
Use: In semiconductor electronics; in steel manuf. AlN components and substrates are used in electrical engines, microelectronics, naval radio and defense systems, railway transport systems, telecommunications and research satellites, and emission control systems.
