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CAS No 1312-41-0 , indiganylidynestibane Search by region : China

  • Name: indiganylidynestibane
  • Synonyms: indiganylidynestibane; Indiganylidynestibane; stibanylidyneindium;1312-41-0; 519170_ALDRICH; AC1MRHRR;
  • CAS Registry Number:
  • Transport: UN 1549 6.1/PG 3
  • Flash Point: °C
  • Boiling Point: °Cat760mmHg
  • Density: 5.76
  • Safety Statements:
    Hazard Codes Xn,N
    Risk Statements 20/22-51/53
    Safety Statements 61
    RIDADR UN 1549 6.1/PG 3
    WGK Germany 2
    RTECS NL1105000
    HazardClass 6.1
    PackingGroup III
  • Hazard Symbols: Xn: Harmful;N: Dangerous for the environment;
  • Flash Point: °C
  • EINECS: 215-192-3
  • Molecular Weight: 236.578
  • InchiKey: WPYVAWXEWQSOGY-UHFFFAOYSA-N
  • InChI: InChI=1S/In.Sb
  • Risk Statements: 20/22-51/53
  • Molecular Formula: InSb
  • Molecular Structure:CAS No:1312-41-0 indiganylidynestibane

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References of indiganylidynestibane
Title: Indium Antimonide
CAS Registry Number: 1312-41-0
Molecular Formula: InSb
Molecular Weight: 236.58
Percent Composition: In 48.53%, Sb 51.47%
Literature References: Prepd by melting together stoichiometric amounts of indium and antimony in evacuated ampuls or in zone-refining apparatus: Kleppa, J. Am. Chem. Soc. 77, 897 (1955); Harmon, J. Electrochem. Soc. 103, 128 (1956). Reviews: Welker, Weiss in Solid State Physics vol. 3 (Academic Press, New York, 1956); Minden, Sylvania Technol. 11, no. 1, 13-25 (Jan. 1958); Hulme, Mullin, Solid State Electron. 5 (Pergamon Press, 1962) 211-247.
Properties: Crystals (zinc blende structure). mp 535°. d at mp 5.74 (solid); 6.48 (liq). Dielectric constant = 15.9. Energy gap at 25° = 0.18 ev. Hole mobility 1250 cm2/volt-sec. Electron mobility approx 80,000 cm2/volt-sec.
Melting point: mp 535°
Density: d at mp 5.74 (solid); 6.48 (liq)
Use: In semiconductor electronics. Grown p-n junctions have been made by doping a melt with an acceptor impurity such as zinc or cadmium, and dipping in an n-type crystal. Rate-grown junctions have also been made. Broad-area surface junctions have been produced by out-diffusing antimony in vacuum from the surface of an n-type crystal, producing a p-n junction just inside the surface. Also has photoconductive, photoelectromagnetic, and magnetoresistive properties. Useful as an infrared detector and filter, and in Hall effect devices.