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CAS No 1303-11-3 , indiganylidynearsane

  • Name: indiganylidynearsane
  • Synonyms: arsanylidyneindium;indiganylidynearsane; 1303-11-3; 13123-07-4; Indium monoarsenide; EINECS 215-115-3; Indium arsenide (InAs);Indiam arsenide;
  • CAS Registry Number:
  • Transport: UN1557
  • Flash Point: °C
  • Boiling Point: °Cat760mmHg
  • Density: g/cm3
  • Safety Statements: Low toxicity by subcutaneous route. Experimental reproductive effects. When heated to decomposition it emits toxic vapors of As and In.
  • Flash Point: °C
  • EINECS: 215-115-3
  • Molecular Weight: 189.7396
  • InchiKey: RPQDHPTXJYYUPQ-UHFFFAOYSA-N
  • InChI: InChI=1S/As.In
  • Molecular Formula: AsIn
  • Molecular Structure:CAS No:1303-11-3 indiganylidynearsane

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1303-11-3 INDIUM ARSENIDE 99.999%

  • Hong kong Advanced Technology & Industrial Co., Ltd. [Manufacturer]
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1303-11-3 G-1023 GALLIUM ANTIMONIDE

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1303-11-3 (0610) INDIUM ARSENIDE

  • Germany Fox Chemicals GmbH [Manufacturer]
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1303-11-3 INDIUM ARSENIDE 99,999%

  • Germany Cfm Oskar Tropitzsch [Manufacturer]
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1303-11-3 Indium Arsenide

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1303-11-3 Indium Arsenide

  • China Beijing Cerametek Materials Co. Ltd. [Manufacturer]
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1303-11-3 INDIUM ARSENIDE

  • China Nanjing Chemlin Chemical Industry Co.,Ltd. [Manufacturer]
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1/1
References of indiganylidynearsane
Title: Indium Arsenide
CAS Registry Number: 1303-11-3
Molecular Formula: AsIn
Molecular Weight: 189.74
Percent Composition: As 39.49%, In 60.51%
Line Formula: InAs
Literature References: Prepd by fusion of the elements in an evacuated, sealed tube: Gans et al., Compt. Rend. 237, 310 (1953); Talley, Enright, Phys. Rev. 94, 1931 (1954); Harmon et al., ibid. 104, 1562 (1956); Minden, Sylvania Technol. 11, no. 1, 17 (Jan. 1958).
Properties: Metallic appearance. Small single crystals have been grown by a modification of the Czochralski technique: Gremmelmaier, Z. Naturforsch. 11A, 463 (1956). mp 943°. Hardly attacked by mineral acids. Energy gap: 0.35 ev. Electron mobility: approx 33,000 cm2/volt-sec. Hole mobility: 460 cm2/volt-sec. Dielectric constant 11.7.
Melting point: mp 943°
Use: In semiconductor electronics.