Home > Name List By a > azanylidyneindigane China

CAS No 25617-98-5 , azanylidyneindigane Search by region : China

  • Name: azanylidyneindigane
  • Synonyms: Indium nitride (InN); nitridoindium; 12030-05-6;azanylidyneindigane; AC1L3L4E; azanylidyneindigane; 490628_ALDRICH;Indium(III) nitride; 25617-98-5;
  • CAS Registry Number:
  • Density: 6,88 g/cm3
  • EINECS: 247-130-6
  • Molecular Weight: 128.8247
  • InchiKey: NWAIGJYBQQYSPW-UHFFFAOYSA-N
  • InChI: InChI=1S/In.N
  • Molecular Formula: InN
  • Molecular Structure:CAS No:25617-98-5 azanylidyneindigane

Related products

Select to

25617-98-5 Indium Nitride

  • China Beijing Cerametek Materials Co. Ltd. [Manufacturer]
  • Tel: +86-10-6156.6641
  • Fax: +86-10-6156.1674
  • Address: Beijing Cerametek Materials Co. Ltd.
    2-E051, BPE, W. NongLin Rd.,
    FangShan, Beijing, 102400,
    China null,nullChina
Contact Supplier

25617-98-5 INDIUM NITRIDE

  • China Nanjing Chemlin Chemical Industry Co.,Ltd. [Manufacturer]
  • Tel: +86 25 8369-7070/ +86 138 51816776 (Mobile)
  • Fax: +86 25 8345-3275
  • Address: Rm.902 Longyin Plaza,
    No. 217 Zhongshan Rd.
    (N)Nanjing 210009,China null,nullChina
Contact Supplier

Select to

References of azanylidyneindigane
Title: Indium Nitride
CAS Registry Number: 25617-98-5
Synonyms: Indium mononitride
Molecular Formula: InN
Molecular Weight: 128.82
Percent Composition: In 89.13%, N 10.87%
Literature References: Semiconductor material. Prepn and structure determn: R. Juza, H. Hahn, Z. Anorg. Allg. Chem. 239, 282 (1938). Low-temperature organometallic chemical vapor deposition: R. A. Fischer et al., Chem. Mater. 8, 1356 (1996). Prepn and characterization of nanocrystalline forms: J. Xiao et al., Inorg. Chem. 42, 107 (2003). Physical properties of films: G. V. Samsonov, A. F. Andreeva, Sci. Sintering 12, 155 (1980). Thermal properties: S. Krukowski et al., J. Phys. Chem. Solids 59, 289 (1998). Optical and electronic properties: V. V. Sobolev, M. A. Zlobina, Semiconductors 33, 385 (1999).
Properties: Usually crystallizes as a hexagonal wurtzite lattice. Tdec 427-550°. mp ~1900°. Bandgap = 1.89 eV. n (4.80 eV) = 2.78. d 6.78±0.05.
Melting point: mp ~1900°
Index of refraction: n (4.80 eV) = 2.78
Density: d 6.78±0.05
Use: In manuf of optoelectronic devices such as light-emitting diodes, laser diodes, and solar cells.