Home > Name List By o > oxo(oxogallanyloxy)gallane China

CAS No 12024-21-4 , oxo(oxogallanyloxy)gallane Search by region : China

  • Name: oxo(oxogallanyloxy)gallane
  • Synonyms: I14-17937;12024-21-4; 215066_ALDRICH; AKOS015903618; AC1NOKO8; 99.999%; GALLIUM OXIDE;oxo(oxogallanyloxy)gallane; oxo(oxogallanyloxy)gallane; 10427_RIEDEL;
  • CAS Registry Number:
  • Density: 5.88
  • Refractive index: 1.92
  • Water Solubility: Insoluble in water
  • Safety Statements: Low toxicity by ingestion and intraperitoneal routes. When heated to decomposition it emits toxic vapors of Ga.
  • EINECS: 234-691-7
  • Molecular Weight: 187.4442
  • InchiKey: QZQVBEXLDFYHSR-UHFFFAOYSA-N
  • InChI: InChI=1S/2Ga.3O
  • Risk Statements: S24/25:Avoidcontactwithskinandeyes.;
  • Molecular Formula: Ga2O3
  • Molecular Structure:CAS No:12024-21-4 oxo(oxogallanyloxy)gallane

Select to

12024-21-4 Gallium Oxide Ga2O3

  • 99.999% Gallium Oxide (Ga2O3) powder 1,Purity :5N ( 99.999%) ; 2,Process : Ga(arc heating ) + O2 (excess) =Ga2O3 3,Analysis :GDMS ;XRD 99.999% Gallium Oxide (Ga2O3) powder 1,Purity :5N ( 99.999%) ; 2,Process : Ga(arc heating )+ O2 (excess) Ga2O3 3,An...
  • Min. Order: 3000
  • China Sichuan Xinlong Tellurium Industry Co.,Ltd [Manufacturer]
  • Tel: 86-28-85880454
  • Address: No.485 Tengfei 3rd Road, Southwest Economic airport, Shuangliu, Chengdu, Ch Chengdu,SichuanChina
Contact Supplier

12024-21-4 Gallium Oxide Ga2O3 CAS NO.12024-21-4

  • 99.999% Gallium Oxide (Ga2O3) powder 1,Purity :5N ( 99.999%) ; 2,Process : Ga(arc heating ) + O2 (excess) =Ga2O3 3,Analysis :GDMS ;XRD 99.999% Gallium Oxide (Ga2O3) powder 1,Purity :5N ( 99.999%) ; 2,Process : Ga(arc heating )+ O2 (excess) →Ga2O3 3,...
  • Min. Order: 8000
  • China CNBM(Chengdu) Optoelectronic Materials Co,Ltd [Manufacturer]
  • Tel: 86-28-85880591
  • Address: No.485 Tengfei 3rd Road, Southwest Economic airport, Shuangliu, Chengdu, Ch Chengdu,SichuanChina
Contact Supplier

12024-21-4 Gallium oxide

  • we can supply the gallium oxide ,5N
  • China Shanghai Darong Chemical Materials Co., Ltd [Manufacturer, Trading Company, Distributor/Wholesaler]
  • Tel: 86-21-57790252
  • Fax: --
  • Address: 269 Chenglong Rd,Songjiang District shanghai,ShanghaiChina
Contact Supplier

12024-21-4 Gallium Oxide

  • China Ruiyuan Group Limited [Manufacturers]
  • Tel: +86-21-50456736
  • Fax: +86-21-60853441
  • Address: No.188, Zhangyang Road, Pudong, Shanghai 200122, null,nullChina
Contact Supplier

12024-21-4 Gallium (III) oxide

Contact Supplier

12024-21-4 Gallium Oxide

  • China Beijing Cerametek Materials Co. Ltd. [Manufacturer]
  • Tel: +86-10-6156.6641
  • Fax: +86-10-6156.1674
  • Address: Beijing Cerametek Materials Co. Ltd.
    2-E051, BPE, W. NongLin Rd.,
    FangShan, Beijing, 102400,
    China null,nullChina
Contact Supplier

12024-21-4 Gallium(III) oxide

Contact Supplier

12024-21-4 Gallium(III) oxide

Contact Supplier

12024-21-4 Gallium(III) oxide

Contact Supplier

12024-21-4 Gallium(III) oxide

Contact Supplier

Select to

References of oxo(oxogallanyloxy)gallane
Title: Gallium Oxide
CAS Registry Number: 12024-21-4
Synonyms: Gallia; gallium(III) oxide; gallium sesquioxide
Molecular Formula: Ga2O3
Molecular Weight: 187.44
Percent Composition: Ga 74.40%, O 25.61%
Literature References: Wide band gap material; exhibits both conduction and luminescence properties. Prepn: L. de Boisbaudran, Compt. Rend. 86, 941 (1878). Synthesis of nanostructures: S. Sharma, M. K. Sunkara, J. Am. Chem. Soc. 124, 12288 (2002); and photoluminescence properties of nanowires: X. C. Wu et al., Chem. Phys. Lett. 328, 5 (2000). Polymorphism study: R. Roy et al., J. Am. Chem. Soc. 74, 719 (1952). Crystal structure of b-form: S. Geller, J. Chem. Phys. 33, 676 (1960). Electrical properties: M. R. Lorenz et al., J. Phys. Chem. Solids 28, 403 (1967). Toxicity study: R. K. Wolff et al., J. Appl. Toxicol. 8, 191 (1988). Use as a dehydration catalyst: B. H. Davis et al., J. Org. Chem. 44, 2142 (1979).
Properties: Multiple crystal forms exist; b-Ga2O3 is the only stable form. mp 1725±15°. d 5.94. Band gap, Eg = 4.9 eV.
Melting point: mp 1725±15°
Density: d 5.94
Use: In semiconductors; gas sensing; catalysis. Nanostructures as blue and UV light emitters in optoelectronic device applications.